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  2. DDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR4_SDRAM

    The first DDR4 memory module prototype was manufactured by Samsung and announced in January 2011. [a] Physical comparison of DDR, DDR2, DDR3, and DDR4 SDRAM Front and back of 8 GB [1] DDR4 memory modules. 2005: Standards body JEDEC began working on a successor to DDR3 around 2005, [14] about 2 years before the launch of DDR3 in 2007.

  3. DDR SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR_SDRAM

    1 GB PC3200 non-ECC modules are usually made with 16 512 Mbit chips, 8 on each side (512 Mbits × 16 chips) / (8 bits (per byte)) = 1,024 MB. The individual chips making up a 1 GB memory module are usually organized as 2 26 8-bit words, commonly expressed as 64M×8. Memory manufactured in this way is low-density RAM and is usually compatible ...

  4. Lexar - Wikipedia

    en.wikipedia.org/wiki/Lexar

    In June 2020, Lexar announced its entry to the DRAM market by unveiling seven different DDR4-2666 memory kits for mainstream laptops and desktops. Lexar also plans to release faster, 3000 MHz and 3200 MHz memory kits in the future, along with kits "with heatsinks and RGB lighting", targeting gamers and enthusiasts.

  5. Raptor Lake - Wikipedia

    en.wikipedia.org/wiki/Raptor_Lake

    Memory support: All models support up to 128 GB of RAM and up to 256 GB of DDR5 RAM after a BIOS upgrade. All models support DDR4 and DDR5 in dual-channel mode. [b] All models support up to DDR4-3200 or DDR5-4800.

  6. List of interface bit rates - Wikipedia

    en.wikipedia.org/wiki/List_of_interface_bit_rates

    The table below shows values for PC memory module types. These modules usually combine multiple chips on one circuit board. SIMM modules connect to the computer via an 8-bit- or 32-bit-wide interface. RIMM modules used by RDRAM are 16-bit- or 32-bit-wide. [49] DIMM modules connect to the computer via a 64-bit-wide interface.

  7. DDR3 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR3_SDRAM

    Compared to DDR2 memory, DDR3 memory uses less power. Some manufacturers further propose using "dual-gate" transistors to reduce leakage of current. [10]According to JEDEC, [11]: 111 1.575 volts should be considered the absolute maximum when memory stability is the foremost consideration, such as in servers or other mission-critical devices.

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