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Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
Mask ROMs are factory programmable only and typically used for large-volume products which are not required to be updated after the memory device is manufactured. ...
A NVDIMM (pronounced "en-vee-dimm") or non-volatile DIMM is a type of persistent random-access memory for computers using widely used DIMM form-factors. Non-volatile memory is memory that retains its contents even when electrical power is removed, for example from an unexpected power loss, system crash, or normal shutdown.
It is referred to as non-volatile memory or NVRAM because, after the system loses power, it does retain state by virtue of the CMOS battery. When the battery fails, BIOS settings are reset to their defaults. The battery can also be used to power a real time clock (RTC) and the RTC, NVRAM and battery may be integrated into a single component.
nvSRAM is a type of non-volatile random-access memory (NVRAM). [1] [2] nvSRAM extends the functionality of basic SRAM by adding non-volatile storage such as an EEPROM to the SRAM chip. In operation, data is written to and read from the SRAM portion with high-speed access; the data in SRAM can then be stored into or retrieved from the non ...
NetApp FAS3240-R5. Modern NetApp FAS, AFF or ASA system consist of customized computers with Intel processors using PCI.Each FAS, AFF or ASA system has non-volatile random access memory, called NVRAM, in the form of a proprietary PCI NVRAM adapter or NVDIMM-based memory, to log all writes for performance and to play the data log forward in the event of an unplanned shutdown.
The first EEPROM that used Fowler-Nordheim tunnelling to erase data was invented by Bernward and patented by Siemens in 1974. [24] In February 1977, Israeli-American Eliyahou Harari at Hughes Aircraft Company patented in the US a modern EEPROM technology, based on Fowler-Nordheim tunnelling through a thin silicon dioxide layer between the floating-gate and the wafer.
Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952.