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Silicon–germanium on insulator (SGOI) is a technology analogous to the silicon on insulator (SOI) technology currently employed in computer chips. SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate, resulting in improved electron mobility and higher
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
Microsoft has unveiled its new Majorana 1 chip, powered by topological qubits. CEO Satya Nadella called it a "breakthrough" in quantum computing.
Strained silicon directly on insulator (SSDOI) is a procedure developed by IBM which removes the silicon germanium layer in the strained silicon process leaving the strained silicon directly on the insulator.
The idea of using germanium to strain silicon for the purpose of improving field-effect transistors appears to go back at least as far as 1991. [3] In 2000, an MIT report investigated theoretical and experimental hole mobility in SiGe heterostructure-based PMOS devices. [4] In 2003, IBM was reported to be among primary proponents of the ...
The TO-66 package is made entirely of metal and is commonly used by silicon controlled rectifiers and power transistors. [2] In Europe, it was popularly used by the complementary germanium power transistors AD161/AD162. [3] The TO-66 package consists of a diamond-shaped base plate with diagonals of 31.4 mm (1.24 in) and 19.0 mm (0.75 in).
Gate oxide at NPNP transistor made by Frosch and Derrick, 1957 [1]. The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on.
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