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SiGe (/ ˈ s ɪ ɡ iː / or / ˈ s aɪ dʒ iː /), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain -inducing layer for CMOS ...
Mercury oxide–zinc: Mercuric oxide Mercury cell NaOH/ KOH Mercuric oxide: No 1942– [6] 1996 [7] 0.9 [8] 1.35 [8] 0.36–0.44 (99–123) [8] 1.1–1.8 (300–500) [8] 2 [6] Alkaline: Zn/ MnO 2 LR KOH Manganese (IV) oxide: No 1949 [9] 0.9 [10] 1.5 [11] 1.6 [10] 0.31–0.68 (85–190) [12] 0.90–1.56 (250–434) [12] 50 [12] 8.17 (122) [13 ...
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
The prefix is followed by a two-, three- or four-digit number with no significance as to device properties, although early devices with low numbers tend to be germanium devices. For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix, such as "A", is sometimes used to ...
A nanowire battery uses nanowires to increase the surface area of one or both of its electrodes, which improves the capacity of the battery. Some designs (silicon, germanium and transition metal oxides ), variations of the lithium-ion battery have been announced, although none are commercially available.
Germanium's sensitivity to temperature also limited its usefulness. Scientists theorized that silicon would be easier to fabricate, but few investigated this possibility. Former Bell Labs scientist Gordon K. Teal was the first to develop a working silicon transistor at the nascent Texas Instruments, giving it a technological edge. From the late ...
Compared to later silicon or germanium devices, copper-oxide rectifiers tended to have poor efficiency, and the reverse voltage rating was rarely more than a few volts. A number of rectifier discs would need to be used in series to provide an adequate reverse breakdown voltage figure – a bridge rectifier for a 12V battery charger would often ...
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