enow.com Web Search

Search results

  1. Results from the WOW.Com Content Network
  2. File:Bjt forward active bands.svg - Wikipedia

    en.wikipedia.org/wiki/File:Bjt_forward_active...

    is the w:conduction band, indicates the quasi-w:fermi energy levels, is the intrinsic Fermi level of the undoped semiconductor, and is the w:valence band. This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction.

  3. File:Ebers-Moll model schematic (PNP).svg - Wikipedia

    en.wikipedia.org/wiki/File:Ebers-Moll_model...

    A schematic diagram of the Ebers-Moll models of a PNP BJT. The base, collector and emitter currents are I B, I C and I E, the common-base forward and reverse current gains are α F and α R, and the collector and emitter diode currents are I CD and I ED. Date: 4 August 2010, 05:26 (UTC) Source: Ebers-Moll_Model_PNP.PNG; Author

  4. File:PNP BJT - Structure & circuit.svg - Wikipedia

    en.wikipedia.org/wiki/File:PNP_BJT_-_Structure_...

    Main page; Contents; Current events; Random article; About Wikipedia; Contact us

  5. File:Bjt equilibrium bands v2.svg - Wikipedia

    en.wikipedia.org/wiki/File:Bjt_equilibrium_bands...

    Energy band diagram of a simple bipolar junction transistor under equilibrium showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. <math>E_c</math> is the conduction band

  6. Band diagram - Wikipedia

    en.wikipedia.org/wiki/Band_diagram

    Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]

  7. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948, [12] was for three decades the device of choice in the design of discrete and integrated circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the design of digital integrated circuits.

  8. File:BJT symbol PNP.svg - Wikipedia

    en.wikipedia.org/wiki/File:BJT_symbol_PNP.svg

    This work has been released into the public domain by its author, E2m.This applies worldwide. In some countries this may not be legally possible; if so: E2m grants anyone the right to use this work for any purpose, without any conditions, unless such conditions are required by law.

  9. Transistor diode model - Wikipedia

    en.wikipedia.org/wiki/Transistor_diode_model

    In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.