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Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes). This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than the alloy-junction and grown junction processes for making bipolar junction transistors (BJTs). Bell Labs developed the first prototype diffused junction bipolar transistors in 1954. [1]
ASM's products are used by semiconductor manufacturers in front-end wafer processing in their semiconductor fabrication plants. ASM's technologies include atomic layer deposition, epitaxy, chemical vapor deposition and diffusion. [1] The company was founded by Arthur del Prado (1931-2016) as 'Advanced Semiconductor Materials' in 1964. [2]
This diffusion current is governed by Fick's law: = where: F is flux. D e is the diffusion coefficient or diffusivity; is the concentration gradient of electrons; The diffusion coefficient for a charge carrier is related to its mobility by the Einstein relation.
The drift velocity, and resulting current, is characterized by the mobility; for details, see electron mobility (for solids) or electrical mobility (for a more general discussion). See drift–diffusion equation for the way that the drift current, diffusion current, and carrier generation and recombination are combined into a single equation.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
A German court has ordered the recall and destruction of some products from lighting maker Signify that infringed on the patents of Seoul Semiconductor, the South Korean firm said on Thursday. The ...
In semiconductor physics, the Haynes–Shockley experiment was an experiment that demonstrated that diffusion of minority carriers in a semiconductor could result in a current. The experiment was reported in a short paper by Haynes and Shockley in 1948, [1] with a more detailed version published by Shockley, Pearson, and Haynes in 1949.