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A thyristor (/ θaɪˈrɪstər /) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications like inverters and radar generators.
Power semiconductor device. Appearance. A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in ...
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current -controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell ...
Reference 2D21 tube is 2 ⅛ inches tall (54 mm). A thyratron is a type of gas-filled tube used as a high-power electrical switch and controlled rectifier. Thyratrons can handle much greater currents than similar hard-vacuum tubes. Electron multiplication occurs when the gas becomes ionized, producing a phenomenon known as a Townsend discharge.
TRIAC. For other uses, see Triac. A TRIAC (triode for alternating current; also bidirectional triode thyristor or bilateral triode thyristor[ 1 ]) is a three-terminal electronic component that conducts current in either direction when triggered. The term TRIAC is a genericised trademark. TRIACs are a subset of thyristors (analogous to a relay ...
The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks, [2] [3] [4] enabling the majority of the world's cellular voice and data traffic. [5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to ...
Electronic symbol. The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. [1] Like the GTO thyristor, the IGCT is a fully controllable power switch ...
e. A Flexible Alternating Current Transmission System (FACTS) is a family of Power-Electronic based devices designed for use on an Alternating Current (AC) Transmission System to improve and control Power Flow and support Voltage. FACTs devices are alternatives to traditional electric grid solutions and improvements, where building additional ...