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The thyristor is a four-layered, three-terminal semiconductor device, with each layer consisting of alternating N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across all four layers. The control terminal, called the gate, is attached to p-type material near the cathode.
When the gate current is discontinued, if the current between the two main terminals is more than what is called the latching current, the device continues to conduct. Latching current is the minimum current that keeps the device internal structure latched in the absence of gate current. The value of this parameter varies with:
anode, gate, cathode. Electronic symbol. A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric. [1] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
Latch-up. In electronics, a latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically, it is the inadvertent creation of a low- impedance path between the power supply rails of a MOSFET circuit, triggering a parasitic structure which disrupts proper functioning of the part, possibly even leading to its ...
Scale in centimeters. A reed relay[ i ] is a type of relay that uses an electromagnet to control one or more reed switches. The contacts are of magnetic material and the electromagnet acts directly on them without requiring an armature to move them. Sealed in a long, narrow glass tube, the contacts are protected from corrosion.
Selective catalytic reduction (SCR) means of converting nitrogen oxides, also referred to as NO x with the aid of a catalyst into diatomic nitrogen (N2), and water (H2O). A reductant, typically anhydrous ammonia (NH3), aqueous ammonia (NH4OH), or a urea (CO (NH2)2) solution, is added to a stream of flue or exhaust gas and is reacted onto a ...
Contents. Power semiconductor device. A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation ...
Working principle. Semiconductor. Invented. 1959. Electronic symbol. IGBT schematic symbol. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) [ 1 ][ 2 ...