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The hole mobility is defined by a similar equation: =. Both electron and hole mobilities are positive by definition. Usually, the electron drift velocity in a material is directly proportional to the electric field, which means that the electron mobility is a constant (independent of the electric field).
For holes, is the number of holes per unit volume in the valence band. To calculate this number for electrons, we start with the idea that the total density of conduction-band electrons, n 0 {\displaystyle n_{0}} , is just adding up the conduction electron density across the different energies in the band, from the bottom of the band E c ...
The "holes" are, in effect, electron vacancies in the valence-band electron population of the semiconductor and are treated as charge carriers because they are mobile, moving from atom site to atom site. In n-type semiconductors, electrons in the conduction band move through the crystal, resulting in an electric current.
Electrical mobility is the ability of charged particles (such as electrons or protons) to move through a medium in response to an electric field that is pulling them. The separation of ions according to their mobility in gas phase is called ion mobility spectrometry, in liquid phase it is called electrophoresis.
The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of an electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition.
The rapid fall of resistivity when carriers are injected shows their high mobility, here of the order of 5000 cm 2 /Vs. n-Si/SiO 2 substrate, T=1K. [2] Graphene exhibits high electron mobility at room temperature, with values reported in excess of 15 000 cm 2 ⋅V −1 ⋅s −1. [2] Hole and electron mobilities are nearly identical. [73]
Graphene displays remarkable electron mobility at room temperature, with reported values in excess of 15 000 cm 2 ⋅V −1 ⋅s −1. [9] Hole and electron mobilities were expected to be nearly identical. [3]
In a semiconductor with an arbitrary density of states, i.e. a relation of the form = between the density of holes or electrons and the corresponding quasi Fermi level (or electrochemical potential) , the Einstein relation is [11] [12] =, where is the electrical mobility (see § Proof of the general case for a proof of this relation).