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High-capacity DIMMs such as 256 GB DIMMs can have up to 19 chips per side. In the case of "×4" registered DIMMs, the data width per side is 36 bits; therefore, the memory controller (which requires 72 bits) needs to address both sides at the same time to read or write the data it needs. In this case, the two-sided module is single-ranked.
Modern DIMMs can for example feature one rank (single rank), two ranks (dual rank), four ranks (quad rank), or eight ranks (octal rank). [ citation needed ] There is only a little difference between a dual rank UDIMM and two single-rank UDIMMs in the same memory channel, other than that the DRAMs reside on different PCBs .
DDR4 SO-DIMMs have 260 pins instead of the 204 pins of DDR3 SO-DIMMs, spaced at 0.5 rather than 0.6 mm, and are 2.0 mm wider (69.6 versus 67.6 mm), but remain the same 30 mm in height. [ 54 ] For its Skylake microarchitecture , Intel designed a SO-DIMM package named UniDIMM , which can be populated with either DDR3 or DDR4 chips.
For a 64-bit-wide memory data interface, this equates to having 4 ranks, where each rank can be selected by a 2-bit chip select signal. Memory controllers such as the Intel 945 Chipset list the configurations they support: "256-Mib, 512-Mib, and 1-Gib DDR2 technologies for ×8 and ×16 devices", "four ranks for all DDR2 devices up to 512-Mibit ...
Two types of DIMMs (dual in-line memory modules): a 168-pin SDRAM module (top) and a 184-pin DDR SDRAM module (bottom). Memory modules of SK Hynix. In computing, a memory module or RAM stick is a printed circuit board on which memory integrated circuits are mounted.
In other words, LR-DIMMs buffer both control and data lines while keeping the parallel nature of all signals. As a result, LR-DIMMs provide large overall maximum memory capacities, while avoiding the performance and power consumption problems of FB-DIMMs, induced by the required conversion between serial and parallel signal forms. [7] [9
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DDR2 and DDR3 increased this factor to 4× and 8×, respectively, delivering 4-word and 8-word bursts over 2 and 4 clock cycles, respectively. The internal access rate is mostly unchanged (200 million per second for DDR-400, DDR2-800 and DDR3-1600 memory), but each access transfers more data.
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