enow.com Web Search

Search results

  1. Results from the WOW.Com Content Network
  2. Field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Field-effect_transistor

    The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [64] [65] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.

  3. Field effect (semiconductor) - Wikipedia

    en.wikipedia.org/wiki/Field_effect_(semiconductor)

    In physics, the field effect refers to the modulation of the electrical conductivity of a material by the application of an external electric field. In a metal , the electron density that responds to applied fields is so large that an external electric field can penetrate only a very short distance into the material.

  4. Threshold voltage - Wikipedia

    en.wikipedia.org/wiki/Threshold_voltage

    The threshold voltage, commonly abbreviated as V th or V GS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (V GS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency.

  5. MOSFET - Wikipedia

    en.wikipedia.org/wiki/MOSFET

    In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.

  6. List of MOSFET applications - Wikipedia

    en.wikipedia.org/wiki/List_of_MOSFET_applications

    MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.

  7. Organic field-effect transistor - Wikipedia

    en.wikipedia.org/.../Organic_field-effect_transistor

    The concept of a field-effect transistor (FET) was first proposed by Julius Edgar Lilienfeld, who received a patent for his idea in 1930. [6] He proposed that a field-effect transistor behaves as a capacitor with a conducting channel between a source and a drain electrode. Applied voltage on the gate electrode controls the amount of charge ...

  8. FET amplifier - Wikipedia

    en.wikipedia.org/wiki/FET_amplifier

    A FET amplifier is an amplifier that uses one or more field-effect transistors (FETs). The most common type of FET amplifier is the MOSFET amplifier, which uses metal–oxide–semiconductor FETs (MOSFETs). The main advantage of a FET used for amplification is that it has very high input impedance and low output impedance.

  9. Field-effect tetrode - Wikipedia

    en.wikipedia.org/wiki/Field-effect_tetrode

    The tetrode field-effect transistor [1] or field-effect tetrode is a solid-state semiconductor device, constructed by creating two field-effect channels back-to-back, with a junction between. It is a four-terminal device which does not have specific gate terminals because each channel is a gate for the other, [ 2 ] the voltage conditions ...