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The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [64] [65] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.
The VMOS was invented by Hitachi in 1969, [11] when they introduced the first vertical power MOSFET in Japan. [12] T. J. Rodgers, while he was a student at Stanford University, filed a US patent for a VMOS in 1973. [13] Siliconix commercially introduced a VMOS in 1975. [11] The VMOS later developed into what became known as the vertical DMOS . [14]
In physics, the field effect refers to the modulation of the electrical conductivity of a material by the application of an external electric field. In a metal , the electron density that responds to applied fields is so large that an external electric field can penetrate only a very short distance into the material.
The threshold voltage, commonly abbreviated as V th or V GS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (V GS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency.
A FET amplifier is an amplifier that uses one or more field-effect transistors (FETs). The most common type of FET amplifier is the MOSFET amplifier, which uses metal–oxide–semiconductor FETs (MOSFETs). The main advantage of a FET used for amplification is that it has very high input impedance and low output impedance.
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate electrode and source-drain conduction region of the device (the channel). Permanent electrical field polarisation in the ferroelectric causes this type of device to retain the transistor's ...