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A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions.
The resonant-tunneling diode (RTD) has achieved some of the highest frequencies of any solid-state oscillator. [10] Another type of tunnel diode is a metal-insulator-insulator-metal (MIIM) diode, where an additional insulator layer allows "step tunneling" for more precise control of the diode. [11]
Tunneling applications include the tunnel diode, [5] quantum computing, flash memory, and the scanning tunneling microscope. Tunneling limits the minimum size of devices used in microelectronics because electrons tunnel readily through insulating layers and transistors that are thinner than about 1 nm.
Unlike classical diodes, its current is carried by resonant tunneling through two or more potential barriers (see figure at right). Its negative resistance behavior can only be understood with quantum mechanics: As the confined state moves close to Fermi level, tunnel current increases. As it moves away, the current decreases.
tunnel diode, [54] [43] resonant tunneling diode [55] and other semiconductor diodes using the tunneling mechanism [56] Gunn diode [57] and other diodes using the transferred electron mechanism [56] IMPATT diode, [43] [57] TRAPATT diode and other diodes using the impact ionization mechanism [56] Some NPN transistors with E-C reverse biased ...
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor ( MOSFET ), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics .
Fairchild FQD19N10 - N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ. A quantum field-effect transistor (QFET) or quantum-well field-effect transistor (QWFET) is a type of MOSFET (metal–oxide–semiconductor field-effect transistor) [1] [2] [3] that takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistor's area of ...
Schematic representation (similar to band diagram) of an electron tunnelling through a barrier. In mesoscopic physics, a Coulomb blockade (CB), named after Charles-Augustin de Coulomb's electrical force, is the decrease in electrical conductance at small bias voltages of a small electronic device comprising at least one low-capacitance tunnel junction. [1]