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A two-dimensional semiconductor (also known as 2D semiconductor) is a type of natural semiconductor with thicknesses on the atomic scale. Geim and Novoselov et al. initiated the field in 2004 when they reported a new semiconducting material graphene, a flat monolayer of carbon atoms arranged in a 2D honeycomb lattice. [1]
Semiconductor materials, which are used to fabricate the superlattice structures, may be divided by the element groups, IV, III-V and II-VI. While group III-V semiconductors (especially GaAs/Al x Ga 1−x As) have been extensively studied, group IV heterostructures such as the Si x Ge 1−x system are much more difficult to realize because of ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
(a) Structure of a hexagonal TMD monolayer. M atoms are in black and X atoms are in yellow. (b) A hexagonal TMD monolayer seen from above. Transition-metal dichalcogenide (TMD or TMDC) monolayers are atomically thin semiconductors of the type MX 2, with M a transition-metal atom (Mo, W, etc.) and X a chalcogen atom (S, Se, or Te).
Aside from being in practically every semiconductor device in use today, two dimensional systems allow access to interesting physics. The quantum Hall effect was first observed in a 2DEG, [9] which led to two Nobel Prizes in physics, of Klaus von Klitzing in 1985, [10] and of Robert B. Laughlin, Horst L. Störmer and Daniel C. Tsui in 1998. [11]
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate ...
In principle, any semiconductor material can be used as a multiplication region: Silicon will detect in the visible and near infrared, with low multiplication noise (excess noise). Germanium (Ge) will detect infrared out to a wavelength of 1.7 μm, but has high multiplication noise.