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Trails of a 20 mW 405 nm violet laser shows clear fluorescence on some objects. A blue laser emits electromagnetic radiation with a wavelength between 400 and 500 nanometers, which the human eye sees in the visible spectrum as blue or violet. [1] Blue lasers can be produced by:
This is due to the shorter wavelength (405 nm) of the blue-violet laser employed. MOs use a 650 nm-wavelength red laser. Because its beam width is shorter when burning to a disc than a red-laser for MO, a blue-violet laser allows more information to be stored digitally in the same amount of space. Current generations of UDO2 media store up to ...
Helium–silver (HeAg) metal-vapor laser [3] 224.3 nm Scientific research Strontium vapor laser: 430.5 nm Scientific research Neon–copper (NeCu) metal-vapor laser [3] 248.6 nm Electrical discharge in metal vapor mixed with neon buffer gas. Scientific research: Raman and fluorescence spectroscopy [4] [5] Copper vapor laser: 510.6 nm, 578.2 nm
These laser diodes are mass-produced for the reading and writing of data in Blu-ray drives (although the light emitted by the diodes is not blue, but distinctly violet). In mid-to-late 2011, 405 nm blue-violet laser diode modules with an optical power of 250 mW, based on GaN violet laser diodes made for Blu-ray disc readers, had reached the ...
405 nm (blue-violet laser) 405 or 650 nm 650 nm (red laser) Numerical aperture: 0.85 0.65 0.85 or 0.6 0.6 Storage capacity (single side) per layer/maximum 33/100 GB
Red (660 & 635 nm), green (532 & 520 nm), and blue-violet (445 & 405 nm) lasers In most lasers, lasing begins with spontaneous emission into the lasing mode. This initial light is then amplified by stimulated emission in the gain medium.
Semi-conductor lasers (Bottom to Top: 660 nm, 635 nm, 532 nm, 520 nm, 445 nm, 405 nm) A laser diode is electrically a PIN diode.The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively.
For example, GaN is the substrate that makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites.
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