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Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres ), electrons can tunnel from one ferromagnet into the other.
All these MR-based sensors have higher sensitivity compared to Hall-effect sensors. Despite this, these sensors (GMR, CMR, and TMR) are still more expensive than Hall-effect devices, have serious drawbacks related with nonlinear behavior, distinct thermal drift, and a very strong external field can permanently alter the sensor behavior (GMR).
Hall effect magnetometers (also called tesla meters or gauss meters) use a Hall probe [23] with a Hall element to measure magnetic fields or inspect materials (such as tubing or pipelines) using the principles of magnetic flux leakage. A Hall probe is a device that uses a calibrated Hall effect sensor to directly measure the strength of a ...
The effect arises in most cases from the simultaneous action of magnetization and spin–orbit interaction (exceptions related to non-collinear magnetic order notwithstanding) [8] and its detailed mechanism depends on the material. It can be for example due to a larger probability of s-d scattering of electrons in the direction of magnetization ...
The term ordinary Hall effect can be used to distinguish the effect described in the introduction from a related effect which occurs across a void or hole in a semiconductor or metal plate when current is injected via contacts that lie on the boundary or edge of the void. The charge then flows outside the void, within the metal or semiconductor ...
The planar Hall sensor is a type of magnetic sensor based on the planar Hall effect of ferromagnetic materials. [1] [2] It measures the change in anisotropic magnetoresistance caused by an external magnetic field in the Hall geometry. As opposed to an ordinary Hall sensor, which measures field components perpendicular to the sensor plane, the ...
Geographic redundancy corrects the vulnerabilities of redundant devices deployed by geographically separating backup devices. Geographic redundancy reduces the likelihood of events such as power outages, floods, HVAC failures, lightning strikes, tornadoes, building fires, wildfires, and mass shootings disabling most of the system if not the entirety of it.
A new type of magnetic storage, called magnetoresistive random-access memory or MRAM, is being produced that stores data in magnetic bits based on the tunnel magnetoresistance (TMR) effect. Its advantage is non-volatility, low power usage, and good shock robustness.