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Silicon carbide (SiC), also known as carborundum (/ ˌ k ɑːr b ə ˈ r ʌ n d əm /), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor , it occurs in nature as the extremely rare mineral moissanite , but has been mass-produced as a powder and crystal since 1893 for use as an abrasive .
As natural sources of silicon carbide are rare, and only certain atomic arrangements are useful for gemological applications, North Carolina–based Cree Research, Inc., founded in 1987, developed a commercial process for producing large single crystals of silicon carbide. Cree is the world leader in the growth of single crystal silicon carbide ...
The different polytypes have widely ranging physical properties. 3C-SiC has the highest electron mobility and saturation velocity because of reduced phonon scattering resulting from the higher symmetry. The band gaps differ widely among the polytypes ranging from 2.3 eV for 3C-SiC to 3 eV in 6H SiC to 3.3 eV for 2H-SiC. In general, the greater ...
Silicon carbide charge is sublimated from the bottom of the chamber and deposited on the upper lid, which is cooler. The Lely method , also known as the Lely process or Lely technique , is a crystal growth technology used for producing silicon carbide crystals for the semiconductor industry .
Silicon carbide color centers are point defects in the crystal lattice of silicon carbide, which are known as color centers. These color centers have multiple uses, some of which are in photonics, semiconductors, and quantum applications like metrology and quantum communication. Defects in materials have a plethora of applications, but the ...
Polytypes are a special case of polymorphs, where multiple close-packed crystal structures differ in one dimension only. Polytypes have identical close-packed planes, but differ in the stacking sequence in the third dimension perpendicular to these planes. Silicon carbide (SiC) has more than 170 known polytypes, although most are
Reaction bonded silicon carbide, also known as siliconized silicon carbide or SiSiC, is a type of silicon carbide that is manufactured by a chemical reaction between porous carbon or graphite with molten silicon. Due to the left over traces of silicon, reaction bonded silicon carbide is often referred to as siliconized silicon carbide, or its ...
Amorphous alloys of silicon and carbon (amorphous silicon carbide, also hydrogenated, a-Si 1−x C x:H) are an interesting variant. Introduction of carbon atoms adds extra degrees of freedom for control of the properties of the material. The film could also be made transparent to visible light.
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