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  2. Generative adversarial network - Wikipedia

    en.wikipedia.org/wiki/Generative_adversarial_network

    The two time-scale update rule (TTUR) is proposed to make GAN convergence more stable by making the learning rate of the generator lower than that of the discriminator. The authors argued that the generator should move slower than the discriminator, so that it does not "drive the discriminator steadily into new regions without capturing its ...

  3. Wasserstein GAN - Wikipedia

    en.wikipedia.org/wiki/Wasserstein_GAN

    The original GAN method is based on the GAN game, a zero-sum game with 2 players: generator and discriminator. The game is defined over a probability space (,,), The generator's strategy set is the set of all probability measures on (,), and the discriminator's strategy set is the set of measurable functions : [,].

  4. Gallium nitride - Wikipedia

    en.wikipedia.org/wiki/GaN

    GaN high-electron-mobility transistors (HEMT) have been offered commercially since 2006, and have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation. A second generation of devices with shorter gate lengths will address higher-frequency telecom and aerospace applications.

  5. StyleGAN - Wikipedia

    en.wikipedia.org/wiki/StyleGAN

    A direct predecessor of the StyleGAN series is the Progressive GAN, published in 2017. [9]In December 2018, Nvidia researchers distributed a preprint with accompanying software introducing StyleGAN, a GAN for producing an unlimited number of (often convincing) portraits of fake human faces.

  6. Gallium nitride nanotube - Wikipedia

    en.wikipedia.org/wiki/Gallium_nitride_nanotube

    Instead, a catalyst- free high temperature process is used, which requires certain conditions. One of these conditions was high heat. The nanotube growth for c-GaN nanotubes was done at around 1600 degrees Celsius (200 degrees higher than the conditions required to grow h- GaN nanotubes), and was continuously increased throughout the process.

  7. Indium gallium nitride - Wikipedia

    en.wikipedia.org/wiki/Indium_gallium_nitride

    InGaN blue LED (380–405 nm) Spectrum of a white-light LED where GaN or InGaN blue source pumps Ce:YAG phosphor. Indium gallium nitride (InGaN, In x Ga 1−x N) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor.

  8. Will GAN Limited (GAN) Report Negative Q1 Earnings ... - AOL

    www.aol.com/news/gan-limited-gan-report-negative...

    GAN Limited (GAN) doesn't possess the right combination of the two key ingredients for a likely earnings beat in its upcoming report. Get prepared with the key expectations.

  9. List of experiments in physics - Wikipedia

    en.wikipedia.org/wiki/List_of_experiments_in_physics

    Young's interference experiment: Thomas Young: Confirmation Wave theory of light: 1819 Arago spot experiment François Arago: Confirmation Fresnel diffraction due to circular object 1838 Bedford Level experiment: Samuel Rowbotham: Measurement Curvature of the Earth 1843 Faraday's ice pail experiment: Michael Faraday: Demonstration ...