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The most common modern type of varistor is the metal-oxide varistor (MOV). This type contains a ceramic mass of zinc oxide (ZnO) grains, in a matrix of other metal oxides, such as small amounts of bismuth, cobalt, manganese oxides, sandwiched between two metal plates, which constitute the electrodes of the device.
LDMOS (laterally-diffused metal-oxide semiconductor) [1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p + silicon epitaxial layers.
Metal oxide varistors typically have lower resistance as they heat up; if connected directly across a power bus, for protection against voltage spikes, a varistor with a lowered trigger voltage can slide into catastrophic thermal runaway and sometimes a small explosion or fire. [23]
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
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Three-layer DIAC. The DIAC (diode for alternating current) is a diode that conducts electrical current only after its breakover voltage, V BO, has been reached momentarily.. Three, four, and five layer structures may be us
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The most prominent and widely used FET in modern microelectronics is the MOSFET (metal–oxide–semiconductor FET). There are different kinds in this category, such as MISFET (metal–insulator–semiconductor field-effect transistor), and IGFET (insulated-gate FET). A schematic of a MISFET is shown in Figure 1a.