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The most common modern type of varistor is the metal-oxide varistor (MOV). This type contains a ceramic mass of zinc oxide (ZnO) grains, in a matrix of other metal oxides, such as small amounts of bismuth, cobalt, manganese oxides, sandwiched between two metal plates, which constitute the electrodes of the device.
The strict physics definition treats passive components as ones that cannot supply energy themselves, whereas a battery would be seen as an active component since it truly acts as a source of energy. However, electronic engineers who perform circuit analysis use a more restrictive definition of passivity .
Metal oxide varistor, an electronic component with a significant non-ohmic current-voltage characteristic; Marconi-Osram Valve, a former British manufacturer of vacuum tubes; The Merchant of Venice, a play by William Shakespeare; MOV (TV channel), a Portuguese television channel operated by NOS
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PMOS uses p-channel (+) metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. PMOS transistors operate by creating an inversion layer in an n-type transistor body. This inversion layer, called the p-channel, can conduct holes between p-type "source" and "drain" terminals.
MOS stands for metal-oxide-semiconductor, reflecting the way MOS-transistors were originally constructed, predominantly before the 1970s, with gates of metal, typically aluminium. Since around 1970, however, most MOS circuits have used self-aligned gates made of polycrystalline silicon , a technology first developed by Federico Faggin at ...
3) If varistors are not designed for lightning protection, then why do varistor datasheets routinely specify numbers unique to lightning strikes (ie 8/20 microsecond pulses)? Varistors are for protection from lightning strikes and from other similar and lesser current pulses. But varistors are only one component of the application device.
A voltage between substrate and oxide surfaces arises due to an ion sheath. It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), [1] and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference electrode. [2]