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CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, / ˈ s iː m ɒ s /, also US: /-ɔː s / [1]) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [2]
sCMOS (scientific Complementary Metal–Oxide–Semiconductor) are a type of CMOS image sensor (CIS). [1] These sensors are commonly used as components in specific observational scientific instruments, such as microscopes [2] and telescopes.
The standard CMOS APS pixel consists of a photodetector (pinned photodiode), [2] a floating diffusion, and the so-called 4T cell consisting of four CMOS (complementary metal–oxide–semiconductor) transistors, including a transfer gate, reset gate, selection gate and source-follower readout transistor. [36]
Low voltage complementary metal oxide semiconductor (LVCMOS) is a low voltage class of CMOS technology digital integrated circuits. Overview To obtain better ...
Bipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal–oxide–semiconductor) logic gate, into a single integrated circuit.
In high performance CMOS (complementary metal–oxide–semiconductor) amplifier circuits, transistors are not only used to amplify the signal but are also used as active loads to achieve higher gain and output swing in comparison with resistive loads. [1] [2] [3] CMOS technology was introduced primarily for digital circuit design.
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