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Compared to PRAM, ReRAM operates at a faster timescale (switching time can be less than 10 ns), while compared to MRAM, it has a simpler, smaller cell structure (less than 8F² MIM stack). A vertical 1D1R (one diode, one resistive switching device) integration can be used for crossbar memory structure to reduce the unit cell size to 4F² (F is ...
2003 — A 128 kbit MRAM chip was introduced, manufactured with a 180 nm lithographic process; 2004 June — Infineon unveiled a 16-Mbit prototype, manufactured with a 180 nm lithographic process; September — MRAM becomes a standard product offering at Freescale. October — Taiwan developers of MRAM tape out 1 Mbit parts at TSMC.
RRAM (ReRAM) works by changing the resistance across a dielectric solid-state material often referred to as a memristor. ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field.
This is strictly the same technology as "Phase-change memory". Specific RRAM content should be merged into the "Phase-change memory" page. Disagree: A reading of patent 6946702 suggests phase-change memory and the resistance random access memory described in the patent use a fundamentally different memory storage element.
Data reliability is guaranteed in F-RAM even in a high magnetic field environment compared to MRAM. Cypress Semiconductor's [ 16 ] F-RAM devices are immune to the strong magnetic fields and do not show any failures under the maximum available magnetic field strengths (3,700 Gauss for horizontal insertion and 2,000 Gauss for vertical insertion).
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A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.