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The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5]
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations
A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays. [1] In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages: high input impedance of the insulated gate means almost no gate current is required
The 2N2222 is considered a very common transistor, [1] [2] [3] and is used as an exemplar of an NPN transistor. It is frequently used as a small-signal transistor, [4] [5] and it remains a small general purpose transistor [6] of enduring popularity. [7] [8] [9] The 2N2222 was part of a family of devices described by Motorola at a 1962 IRE ...
Prior to Issue 2, updates to the specification were known as changes. When the standard reached Change 9, the proposed Change 10 became Issue 2.0 with previous Changes retro-referred to as Issue 1.x. Issue 1.6 was the first publicly published version of S1000D and was notable as the first issue to include operator information (Crew) as well as ...
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