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A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices , such as an insulated-gate bipolar transistor (IGBT) or a thyristor , its main advantages are high switching speed and good efficiency at low voltages.
The MOSFET is the most widely used type of transistor and the most critical device component in integrated circuit (IC) chips. [2] Planar process, developed by Jean Hoerni at Fairchild Semiconductor in early 1959, was critical to the invention of the monolithic integrated circuit chip by Robert Noyce later in 1959.
The power MOSFET is the most common power device in the world, due to its low gate drive power, fast switching speed, [13] easy advanced paralleling capability, [13] [14] wide bandwidth, ruggedness, easy drive, simple biasing, ease of application, and ease of repair. [14]
The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. As MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic.
The power MOSFET is the most common power device in the world, due to its low gate drive power, fast switching speed, and advanced paralleling capability. [16] It has a wide range of power electronic applications, such as portable information appliances , power integrated circuits, cell phones , notebook computers , and the communications ...
Active full-wave rectification with two MOSFETs and a center tap transformer. Replacing a diode with an actively controlled switching element such as a MOSFET is the heart of active rectification. MOSFETs have a constant very low resistance when conducting, known as on-resistance (R DS(on)). They can be made with an on-resistance as low as 10 ...
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