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A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus memory core iron rings 8GB DDR3 RAM stick with a white heatsink Random-access memory ( RAM ; / r æ m / ) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code .
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
There is a common belief that number of module ranks equals number of sides. As above data shows, this is not true. One can also find 2-side/1-rank modules. One can even think of a 1-side/2-rank memory module having 16(18) chips on single side ×8 each, but it is unlikely such a module was ever produced.
RDRAM is a serial memory bus. DRDRAM was initially expected to become the standard in PC memory, especially after Intel agreed to license the Rambus technology for use with its future chipsets. Further, DRDRAM was expected to become a standard for graphics memory.
Normally, there is a performance penalty for using registered memory. Each read or write is buffered for one cycle between the memory bus and the DRAM, so the registered RAM can be thought of as running one clock cycle behind the equivalent unregistered DRAM.
Compared to DDR2 memory, DDR3 memory uses less power. Some manufacturers further propose using "dual-gate" transistors to reduce leakage of current. [10]According to JEDEC, [11]: 111 1.575 volts should be considered the absolute maximum when memory stability is the foremost consideration, such as in servers or other mission-critical devices.
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