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When no current is observed through the tube, the negative voltage has reached the value that is high enough to slow down and stop the most energetic photoelectrons of kinetic energy K max. This value of the retarding voltage is called the stopping potential or cut off potential V o . [ 11 ]
The highest (maximum) value of the photo-current is called saturation current. The value of retarding potential at which photo-current becomes zero is called cut-off voltage or stopping potential for the given frequency of the incident ray.
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage.
Sparks — Electrical breakdown of a medium that produces an ongoing plasma discharge, similar to the instant spark, resulting from a current flowing through normally nonconductive media such as air. Telluric currents — Extremely low frequency electric current that occurs naturally over large underground areas at or near the surface of the Earth.
The effect of reverse saturation current on the I-V curve of a crystalline silicon solar cell are shown in the figure to the right. Physically, reverse saturation current is a measure of the "leakage" of carriers across the p–n junction in reverse bias.
The bias voltage is chosen to be a few times the electron temperature so that the negative electrode draws the ion saturation current, which, like the floating potential, is directly measured. A common rule of thumb for this voltage bias is 3/e times the expected electron temperature.
The dark current includes photocurrent generated by background radiation and the saturation current of the semiconductor junction. Dark current must be accounted for by calibration if a photodiode is used to make an accurate optical power measurement, and it is also a source of noise when a photodiode is used in an optical communication system.
As an application example, the steady-state space-charge-limited current across a piece of intrinsic silicon with a charge-carrier mobility of 1500 cm 2 /V-s, a relative dielectric constant of 11.9, an area of 10 −8 cm 2 and a thickness of 10 −4 cm can be calculated by an online calculator to be 126.4 μA at 3 V. Note that in order for this ...