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  2. Direct and indirect band gaps - Wikipedia

    en.wikipedia.org/wiki/Direct_and_indirect_band_gaps

    The involvement of the phonon makes this process much less likely to occur in a given span of time, which is why radiative recombination is far slower in indirect band gap materials than direct band gap ones. This is why light-emitting and laser diodes are almost always made of direct band gap materials, and not indirect band gap ones like silicon.

  3. Band gap - Wikipedia

    en.wikipedia.org/wiki/Band_gap

    LEDs and laser diodes usually emit photons with energy close to and slightly larger than the band gap of the semiconductor material from which they are made. Therefore, as the band gap energy increases, the LED or laser color changes from infrared to red, through the rainbow to violet, then to UV. [17]

  4. Laser diode - Wikipedia

    en.wikipedia.org/wiki/Laser_diode

    Thus, laser diodes are fabricated using direct band-gap semiconductors. The laser diode epitaxial structure is grown using one of the crystal growth techniques, usually starting from an N- doped substrate, and growing the I (undoped) active layer, followed by the P-doped cladding , and a contact layer.

  5. Light-emitting diode physics - Wikipedia

    en.wikipedia.org/wiki/Light-emitting_diode_physics

    The wavelength of the light emitted, and thus its color, depends on the band gap energy of the materials forming the p-n junction. In silicon or germanium diodes, the electrons and holes usually recombine by a non-radiative transition, which produces no optical emission, because these are indirect band gap materials.

  6. Heterojunction - Wikipedia

    en.wikipedia.org/wiki/Heterojunction

    Semiconductor interfaces can be organized into three types of heterojunctions: straddling gap (type I), staggered gap (type II) or broken gap (type III) as seen in the figure. [9] Away from the junction, the band bending can be computed based on the usual procedure of solving Poisson's equation. Various models exist to predict the band alignment.

  7. Quantum-cascade laser - Wikipedia

    en.wikipedia.org/wiki/Quantum-cascade_laser

    Conventional semiconductor laser diodes generate light by a single photon being emitted when a high energy electron in the conduction band recombines with a hole in the valence band. The energy of the photon and hence the emission wavelength of laser diodes is therefore determined by the band gap of the material system used.

  8. Carrier generation and recombination - Wikipedia

    en.wikipedia.org/wiki/Carrier_generation_and...

    In undoped semiconductors the Fermi level lies in the middle of a forbidden band or band gap between two allowed bands called the valence band and the conduction band. The valence band, immediately below the forbidden band, is normally very nearly completely occupied. The conduction band, above the Fermi level, is normally nearly completely empty.

  9. Light-emitting diode - Wikipedia

    en.wikipedia.org/wiki/Light-emitting_diode

    In a light-emitting diode, the recombination of electrons and electron holes in a semiconductor produces light (be it infrared, visible or UV), a process called "electroluminescence". The wavelength of the light depends on the energy band gap of the semiconductors used. Since these materials have a high index of refraction, design features of ...

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