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Plasma (argon-only on the left, argon and silane on the right) inside a prototype LEPECVD reactor at the LNESS laboratory in Como, Italy.. Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor (silicon, germanium and SiGe alloys) films.
Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a ...
The deposition of copper films by HIPIMS was reported for the first time by V. Kouznetsov for the application of filling 1 μm vias with aspect ratio of 1:1.2 [10] Transition metal nitride (CrN) thin films were deposited by HIPIMS for the first time in February 2001 by A.P. Ehiasarian. [11]
The act of applying a thin film to a surface is thin-film deposition – any technique for depositing a thin film of material onto a substrate or onto previously deposited layers. "Thin" is a relative term, but most deposition techniques control layer thickness within a few tens of nanometres .
Surface finishing is often one of the final steps taken when working metal and is essential for guaranteeing that metal components meet the requirements of the necessary finish. Surface finishing processes can be categorized by how they affect the workpiece: Removing or reshaping finishing; Adding or altering finishing; Coating Methods
Glass coating and surface modification (23 P) M. ... Thin film deposition (4 C, 58 P) V. Varnishes (6 P) ... Combustion chemical vapor deposition; Conformal coating ...
Sputter coating in scanning electron microscopy is a sputter deposition process [clarification needed] to cover a specimen with a thin layer of conducting material, typically a metal, such as a gold/palladium (Au/Pd) alloy. A conductive coating is needed to prevent charging of a specimen with an electron beam in conventional SEM mode (high ...
It can be determined by plotting the film build of a given system versus coating temperature keeping the coating time and voltage application profile constant. At temperatures below the coalescence temperature, film growth behavior and rupturing behavior is quite different from the usual practice as a result of porous deposition.