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Page mode DRAM was in turn later improved with a small modification which further reduced latency. DRAMs with this improvement are called fast page mode DRAMs (FPM DRAMs). In page mode DRAM, the chip does not capture the column address until CAS is asserted, so column access time (until data out was valid) begins when CAS is asserted.
This type of SDRAM is slower than the DDR variants, because only one word of data is transmitted per clock cycle (single data rate). But this type is also faster than its predecessors extended data out DRAM (EDO-RAM) and fast page mode DRAM (FPM-RAM) which took typically two or three clocks to transfer one word of data.
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DRAM (Dynamic random-access memory) – This uses memory cells consisting of one MOSFET (MOS field-effect transistor) and one MOS capacitor to store each bit. This type of RAM is the cheapest and highest in density, so it is used for the main memory in computers.
DRAM technologies used in SIMMs include FPM (Fast Page Mode memory, used in all 30-pin and early 72-pin modules), and the higher-performance EDO DRAM (used in later 72-pin modules). Due to the differing data bus widths of the memory modules and some processors, sometimes several modules must be installed in identical pairs or in identical ...
Rambus DRAM was developed for high-bandwidth applications and was positioned by Rambus as replacement for various types of contemporary memories, such as SDRAM. RDRAM is a serial memory bus . DRDRAM was initially expected to become the standard in PC memory , especially after Intel agreed to license the Rambus technology for use with its future ...