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  2. Boule (crystal) - Wikipedia

    en.wikipedia.org/wiki/Boule_(crystal)

    A semiconductor crystal boule is normally cut into circular wafers using an inside hole diamond saw or diamond wire saw, and each wafer is lapped and polished to provide substrates suitable for the fabrication of semiconductor devices on its surface. [4]

  3. List of semiconductor fabrication plants - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    This is a list of semiconductor fabrication plants, factories where integrated circuits (ICs), also known as microchips, are manufactured.They are either operated by Integrated Device Manufacturers (IDMs) that design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by pure play foundries that manufacture designs from fabless companies and do ...

  4. Silicon on sapphire - Wikipedia

    en.wikipedia.org/wiki/Silicon_on_sapphire

    Silicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al 2 O 3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies.

  5. List of synthetic diamond manufacturers - Wikipedia

    en.wikipedia.org/wiki/List_of_synthetic_diamond...

    Synthetic diamonds are produced via high pressure, high temperature or chemical vapor deposition (CVD) technology. These diamonds have numerous industrial and commercial uses including cutting tools, thermal conductors and consumer diamond gemstones.

  6. RTX's Raytheon Secures DARPA Contract To Develop Ultra-Wide ...

    www.aol.com/rtxs-raytheon-secures-darpa-contract...

    On Wednesday, RTX Corporation (NYSE:RTX) said Raytheon has secured a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors. These will be based on ...

  7. Silicon on insulator - Wikipedia

    en.wikipedia.org/wiki/Silicon_on_insulator

    An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.

  8. Front end of line - Wikipedia

    en.wikipedia.org/wiki/Front_end_of_line

    Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]

  9. Wafer fabrication - Wikipedia

    en.wikipedia.org/wiki/Wafer_fabrication

    Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...

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