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In this phenomenon, when the base of an NPN transistor is turned on, enough current flows through the emitter-collector circuit that the silicon in the immediate vicinity of the emitter-ground connection is pulled partially high, sometimes by several volts, thus raising the local ground, as perceived at the gate, to a value significantly above ...
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Figure 1: Basic NPN common collector circuit (neglecting biasing details). In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
Figure 1: Basic NPN common base circuit (neglecting biasing details). In electronics, a common-base (also known as grounded-base) amplifier is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a current buffer or voltage amplifier.
The open collector transistor can be rated to withstand a higher voltage than the chip supply voltage. This technique is commonly used by logic circuits operating at 5 V or lower to drive higher voltage devices such as electric motors, LEDs in series, [8] 12 V relays, 50 V vacuum fluorescent displays, or Nixie tubes requiring more than 100 V.
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...