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The JLNT (Junctionless nanowire transistor) is a type of Field-effect transistor (FET) which channel is one or multiple nanowires and does not present any junction. The MNOS ( metal–nitride–oxide–semiconductor transistor ) utilizes a nitride-oxide layer insulator between the gate and the body.
Junction-Less nanowire transistor (JLNT) is a type of Field-effect transistor (FET) in which the channel consists of one or more nanowires and does not contain a junction. Existing devices [ edit ]
A nanowire is a nanostructure in the form of a wire with the diameter of the order of a nanometre (10 −9 m). More generally, ... (MOS field-effect transistors).
Charge trapping behavior and tunable surface governed transport properties of SiNWs render this category of nanostructures of interest towards use as metal insulator semiconductors and field effect transistors, [8] where the silicon nanowire is the main channel of the FET which connect the source to the drain terminal, facilitating electron ...
For example, electron transistors, which involve transistor operation based on a single electron. Nanoelectromechanical systems also fall under this category. Nanofabrication can be used to construct ultradense parallel arrays of nanowires, as an alternative to synthesizing nanowires individually.
In 2004, Harvard University nanotech pioneer Charles Lieber and his team have made a nanowire—10,000 times thinner than a sheet of paper—that contains a string of transistors. [9] Essentially, transistors and nanowires are already pre-wired so as to eliminate the difficult task of trying to connect transistors together with nanowires.
In physics, the field effect refers to the modulation of the electrical conductivity of a material by the application of an external electric field. In a metal , the electron density that responds to applied fields is so large that an external electric field can penetrate only a very short distance into the material.
In this case, when a force is applied at the free end of the nanowire to bend it, the piezopotential distribution will be perpendicular to the axis of the nanowire. The introduced piezoelectric field is perpendicular to electron transport direction, just like applying a gate voltage in the traditional field-effect transistor. Thus the electron ...
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