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  2. Transient-voltage-suppression diode - Wikipedia

    en.wikipedia.org/wiki/Transient-voltage...

    A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond , but in a practical circuit the inductance of the wires leading to the device imposes a higher limit.

  3. Power module - Wikipedia

    en.wikipedia.org/wiki/Power_module

    Additional to the traditional screw contacts the electrical connection between the module and other parts of the power electronic system can also be achieved by pin contacts (soldered onto a PCB), press-fit contacts pressed into PCB vias, spring contacts that inherently press on contact areas of a PCB or by pure pressure contact where corrosion-proof surface areas are directly pressed together ...

  4. DIN 72552 - Wikipedia

    en.wikipedia.org/wiki/DIN_72552

    licence plate lights, instrument panel 58d panel light dimmer 58b 58L parking light 58 58R parking light 58 Window wiper/washer; 53 wiper motor + in 1, 3, 54d, S 53a limit stop + 54, +2 53b limit stop field 3, 54e 53c washer pump 53e stop field 1, 2 53i wiper motor with permanent magnet, third brush for high speed Acoustic warning 71 beeper in ...

  5. Diodes Incorporated - Wikipedia

    en.wikipedia.org/wiki/Diodes_Incorporated

    Diodes Incorporated is a global manufacturer and supplier of application specific standard products within the discrete, logic, analog, and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.

  6. Power semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Power_semiconductor_device

    The major breakthrough in power semiconductor devices is expected from the replacement of silicon by a wide band-gap semiconductor. At the moment, silicon carbide (SiC) is considered to be the most promising. A SiC Schottky diode with a breakdown voltage of 1200 V is commercially available, as is a 1200 V JFET. As both are majority carrier ...

  7. Zener diode - Wikipedia

    en.wikipedia.org/wiki/Zener_diode

    The two types of diode are in fact constructed in similar ways and both effects are present in diodes of this type. In silicon diodes up to about 5.6 volts, the Zener effect is the predominant effect and shows a marked negative temperature coefficient. Above 5.6 volts, the avalanche effect dominates and exhibits a positive temperature coefficient.

  8. DIAC - Wikipedia

    en.wikipedia.org/wiki/Diac

    The DIAC (diode for alternating current) is a diode that conducts electrical current only after its breakover voltage, V BO, has been reached momentarily. Three, four, and five layer structures may be used. [1] Behavior is similar to the voltage breakdown of a triac without a gate terminal.

  9. Flyback diode - Wikipedia

    en.wikipedia.org/wiki/Flyback_diode

    Instead of spiking to -300 V, the flyback diode only allows approximately -1.4 V of potential to be built up (-1.4 V is a combination of the forward bias of the 1N4007 diode (1.1 V) and the foot of wiring separating the diode and the solenoid [dubious – discuss]). The waveform in Figure 2 is also smoother than the waveform in Figure 1 ...