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2. MOSFET - Wikipedia

   en.wikipedia.org/wiki/MOSFET

   If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...

3. 2N7000 - Wikipedia

   en.wikipedia.org/wiki/2N7000

   The 2N7000 is an N-channel, enhancement-mode MOSFET used for low-power switching applications. [1] The 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use. [2] Packaged in a TO-92 enclosure, the 2N7000 is rated to withstand 60 volts and can switch 200 millamps.

4. NMOS logic - Wikipedia

   en.wikipedia.org/wiki/NMOS_logic

   A MOSFET can be made to operate as a resistor, so the whole circuit can be made with n-channel MOSFETs only. NMOS circuits are slow to transition from low to high. When transitioning from high to low, the transistors provide low resistance, and the capacitive charge at the output drains away very quickly (similar to discharging a capacitor ...

5. Depletion and enhancement modes - Wikipedia

   en.wikipedia.org/wiki/Depletion_and_enhancement...

   Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage.

6. Power MOSFET - Wikipedia

   en.wikipedia.org/wiki/Power_MOSFET

   NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]

7. Field-effect transistor - Wikipedia

   en.wikipedia.org/wiki/Field-effect_transistor

   I–V characteristics and output plot of a JFET n-channel transistor Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V. FET conventional symbol ...

8. Bootstrapping (electronics) - Wikipedia

   en.wikipedia.org/wiki/Bootstrapping_(electronics)

   An N-MOSFET/IGBT needs a significantly positive charge (V GS > V th) applied to the gate in order to turn on. Using only N-channel MOSFET/IGBT devices is a common cost reduction method due largely to die size reduction (there are other benefits as well). However, using nMOS devices in place of pMOS devices means that a voltage higher than the ...

9. File:Mosfet n-ch circuit.svg - Wikipedia

   en.wikipedia.org/wiki/File:Mosfet_n-ch_circuit.svg

   English: Example circuit with an N-Channel MOSFET. When the switch is closed, raising the voltage at the gate, the LED is activated through the MOSFET and current limiting resistor. The resistor below the switch ensures the capacitance of the MOSFET gate is discharged when the switch is opened.