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Ion beam analysis (IBA) is an important family of modern analytical techniques involving the use of MeV ion beams to probe the composition and obtain elemental depth profiles in the near-surface layer of solids. IBA is not restricted to MeV energy ranges.
An ion beam is a beam of ions, a type of charged particle beam. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. There are many ion beam sources, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most widely used ion beams are of singly-charged ions.
IBA (Ion Beam Applications SA) is a medical technology company based in Louvain-la-Neuve. The company was founded in 1986 by Yves Jongen within the Cyclotron Research Center of the University of Louvain (UCLouvain) and became a university spin-off. It employs about 1500 people in 40 locations. [1]
Ion beam deposition (IBD) is a process of applying materials to a target through the application of an ion beam. [1] Ion beam deposition setup with mass separator. An ion beam deposition apparatus typically consists of an ion source, ion optics, and the deposition target. Optionally a mass analyzer can be incorporated. [2] In the ion source ...
Anion ion beam production was a major subject of study for tandem accelerator application, and one can find recipes and yields for most elements in the Negative Ion Cookbook. [7] Tandems can also be operated in terminal mode, where they function like a single-ended electrostatic accelerator, which is a more common and practical way to make ...
Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM).
The best overall candidate is the 35 Cl ion beam; although, 79 Br would give better sensitivity by one order of magnitude compared to the 35 Cl ion beam. The mass resolution, of the detector at θ= 0° , of thin samples is ΔM/Δx ~ 0.3 amu/1000 Angstroms of the profile width.
Ion beam mixing can be further enhanced by heat spike effects [4] Ion mixing (IM) is essentially similar in result to interdiffusion, hence most models of ion mixing involve an effective diffusion coefficient that is used to characterize thickness of the reacted layer as a function of ion beam implantation over a period of time. [3]