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The optical dopants are characterized with lifetime of excitation and the effective absorption and emission cross-sections, which are main parameters of an active dopant. Usually, the concentration of optical dopant is of order of few percent or even lower.
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as Boron and Antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
Dopant activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. [1] The term is often restricted to the application of thermal energy following the ion implantation of dopants.
Other trivalent dopants include indium (In) and gallium (Ga). [1] When substituting for a silicon atom in the crystal lattice, the three valence electrons of boron form covalent bonds with three of the Si neighbours but the bond with the fourth remains unsatisfied. The initially electro-neutral acceptor becomes negatively charged . The ...
[1] Other pentavalent dopants are antimony (Sb) and bismuth (Bi). When substituting a Si atom in the crystal lattice, four of the valence electrons of phosphorus form covalent bonds with the neighbouring Si atoms but the fifth one remains weakly bonded. If that electron is liberated, the initially electro-neutral donor becomes positively ...
These residual damages can lead to higher junction leakage and lower dopant activation in compound semiconductors. Utilizing the MLD technique with sulfur dopants, a dopant profile abruptness of ~ 3.5 nm/decade with high electrically active sulfur concentrations of ~ 8–1018 cm−3 is observed in InAs without significant defect density. [5]
Random dopant fluctuation (RDF) is a form of process variation resulting from variation in the implanted impurity concentration. In MOSFET transistors, RDF in the channel region can alter the transistor's properties, especially threshold voltage.
Because impurities dissolve differently in silicon and oxide, a growing oxide will selectively take up or reject dopants. This redistribution is governed by the segregation coefficient, which determines how strongly the oxide absorbs or rejects the dopant, and the diffusivity. The orientation of the silicon crystal affects oxidation.