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Transistor packages are made of glass, metal, ceramic, or plastic. The package often dictates the power rating and frequency characteristics. Power transistors have larger packages that can be clamped to heat sinks for enhanced cooling. Additionally, most power transistors have the collector or drain physically connected to the metal enclosure.
Bipolar transistors can be considered voltage-controlled devices (fundamentally the collector current is controlled by the base–emitter voltage; the base current could be considered a defect and is controlled by the characteristics of the base–emitter junction and recombination in the base).
The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [64] [65] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.
Some characteristics of point-contact transistors differ from the slightly later junction transistors: The common base current gain (or α) of a point-contact transistor is usually around 2 to 3, [4] whereas α of bipolar junction transistor (BJT) cannot exceed 1.
The transistor continuously monitors V diff and adjusts its emitter voltage to equal V in minus the mostly constant V BE (approximately one diode forward voltage drop) by passing the collector current through the emitter resistor R E. As a result, the output voltage follows the input voltage variations from V BE up to V +; hence the name ...
The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.
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