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  2. Tunnel magnetoresistance - Wikipedia

    en.wikipedia.org/wiki/Tunnel_magnetoresistance

    Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres ), electrons can tunnel from one ferromagnet into the other.

  3. Spintronics - Wikipedia

    en.wikipedia.org/wiki/Spintronics

    Spintronics emerged from discoveries in the 1980s concerning spin-dependent electron transport phenomena in solid-state devices. This includes the observation of spin-polarized electron injection from a ferromagnetic metal to a normal metal by Johnson and Silsbee (1985) [5] and the discovery of giant magnetoresistance independently by Albert Fert et al. [6] and Peter Grünberg et al. (1988). [7]

  4. Magnetic semiconductor - Wikipedia

    en.wikipedia.org/wiki/Magnetic_semiconductor

    While many traditional magnetic materials, such as magnetite, are also semiconductors (magnetite is a semimetal semiconductor with bandgap 0.14 eV), materials scientists generally predict that magnetic semiconductors will only find widespread use if they are similar to well-developed semiconductor materials. To that end, dilute magnetic ...

  5. Electromagnetic forming - Wikipedia

    en.wikipedia.org/wiki/Electromagnetic_forming

    A pinched aluminium can, produced from a pulsed magnetic field created by rapidly discharging 2 kilojoules from a high-voltage capacitor bank into a 3-turn coil of heavy gauge wire. Electromagnetic forming ( EM forming or magneforming ) is a type of high-velocity, cold forming process for electrically conductive metals, most commonly copper and ...

  6. Magnetoresistance - Wikipedia

    en.wikipedia.org/wiki/Magnetoresistance

    The effect arises in most cases from the simultaneous action of magnetization and spin–orbit interaction (exceptions related to non-collinear magnetic order notwithstanding) [8] and its detailed mechanism depends on the material. It can be for example due to a larger probability of s-d scattering of electrons in the direction of magnetization ...

  7. Resistive random-access memory - Wikipedia

    en.wikipedia.org/wiki/Resistive_random-access_memory

    ABO3-type inorganic perovskite materials such as BaTiO3, SrRuO3, SrZrO3, and SrTiO3 have attracted extensive research interest as the storage media in memristors due to their remarkable resistance switching effects and various functionalities such as ferroelectric, dielectric, and semiconducting physical characteristics. [44]

  8. Magnetostriction - Wikipedia

    en.wikipedia.org/wiki/Magnetostriction

    Magnetostriction is a property of magnetic materials that causes them to change their shape or dimensions during the process of magnetization.The variation of materials' magnetization due to the applied magnetic field changes the magnetostrictive strain until reaching its saturation value, λ.

  9. Electropermanent magnet - Wikipedia

    en.wikipedia.org/wiki/Electropermanent_magnet

    An electropermanent magnet or EPM is a type of permanent magnet in which the external magnetic field can be switched on or off by a pulse of electric current in a wire winding around part of the magnet. The magnet consists of two sections, one of "hard" (high coercivity) magnetic material and one of "soft" (low coercivity) material. The ...