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Column address strobe latency, also called CAS latency or CL, is the delay in clock cycles between the READ command and the moment data is available. [ 1 ] [ 2 ] In asynchronous DRAM , the interval is specified in nanoseconds (absolute time). [ 3 ]
With this 1 ns clock, a CAS latency of 7 gives an absolute CAS latency of 7 ns. Faster DDR3-2666 memory (with a 1333 MHz clock, or 0.75 ns exactly; the 1333 is rounded) may have a larger CAS latency of 9, but at a clock frequency of 1333 MHz the amount of time to wait 9 clock cycles is only 6.75 ns.
In FPM DRAM, the column address can be supplied while CAS is still deasserted, and the main column access time (t AA) begins as soon as the address is stable. The CAS signal is only needed to enable the output (the data out pins were held at high-Z while CAS was deasserted), so time from CAS assertion to data valid (t CAC) is greatly reduced. [63]
Memory latency is the time (the latency) between initiating a request for a byte or word in memory until it is retrieved by a processor. If the data are not in the processor's cache , it takes longer to obtain them, as the processor will have to communicate with the external memory cells.
At higher clock rates, the useful CAS latency in clock cycles naturally increases. 10–15 ns is 2–3 cycles (CL2–3) of the 200 MHz clock of DDR-400 SDRAM, CL4-6 for DDR2-800, and CL8-12 for DDR3-1600. Slower clock cycles will naturally allow lower numbers of CAS latency cycles.
Latency, from a general point of view, is a time delay between the cause and the effect of some physical change in the system being observed. Lag , as it is known in gaming circles , refers to the latency between the input to a simulation and the visual or auditory response, often occurring because of network delay in online games.
On the signaling front, GDDR4 expands the chip I/O buffer to 8 bits per two cycles, allowing for greater sustained bandwidth during burst transmission, but at the expense of significantly increased CAS latency (CL), determined mainly by the double reduced count of the address/command pins and half-clocked DRAM cells, compared to GDDR3. The ...
1GB 2Rx4 PC2-3200P-333-11-D2 is a 1 GB DDR2 Registered DIMM, with address/command parity function, using 2 ranks of x4 SDRAMs operational to PC2-3200 performance with CAS Latency = 3, tRCD = 3, tRP = 3, using JEDEC SPD revision 1.1, raw card reference design file D revision 2 used for the assembly.