Search results
Results from the WOW.Com Content Network
4 derivatives where the central silicon atom shares an electron pair with each of the four atoms it is bonded to. [49] The first four ionisation energies of silicon are 786.3, 1576.5, 3228.3, and 4354.4 kJ/mol respectively; these figures are high enough to preclude the possibility of simple cationic chemistry for the element.
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...
A silicon–oxygen bond (Si−O bond) is a chemical bond between silicon and oxygen atoms that can be found in many inorganic and organic compounds. [1] In a silicon–oxygen bond, electrons are shared unequally between the two atoms , with oxygen taking the larger share due to its greater electronegativity .
Electrical conductivity of water samples is used as an indicator of how salt-free, ion-free, or impurity-free the sample is; the purer the water, the lower the conductivity (the higher the resistivity). Conductivity measurements in water are often reported as specific conductance, relative to the conductivity of pure water at 25 °C.
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
The single-electron Schrödinger equation is solved for an electron in a lattice-periodic potential, giving Bloch electrons as solutions = (), where k is called the wavevector. For each value of k , there are multiple solutions to the Schrödinger equation labelled by n , the band index, which simply numbers the energy bands.
It melts at 1414 °C. Silicon is a semiconductor with an electrical conductivity of 10 −4 S•cm −1 [287] and a band gap of about 1.11 eV. [281] When it melts, silicon becomes a reasonable metal [288] with an electrical conductivity of 1.0–1.3 × 10 4 S•cm −1, similar to that of liquid mercury. [289]
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states.