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The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
The 2N2907 is a commonly available PNP bipolar junction transistor used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.
Ebers–Moll model for a PNP transistor Approximated Ebers–Moll model for an NPN transistor in the forward active mode. The collector diode is reverse-biased so I CD is virtually zero. Most of the emitter diode current (α F is nearly 1) is drawn from the collector, providing the amplification of the base current.
The circuit can be explained by viewing the transistor as being under the control of negative feedback. From this viewpoint, a common-collector stage (Fig. 1) is an amplifier with full series negative feedback. In this configuration (Fig. 2 with β = 1), the entire output voltage V out is placed contrary and in series with the input voltage V in.
1950's PNP Transistors by General Electric. TOP ROW (L-R): 2N43, 2N44, 2N45, 2N107 and 2N188A BOTTOM ROW: 2N107, 2N191 and 2N241. The 2N107 is an early germanium alloy junction PNP transistor developed by General Electric (GE) in 1955, to become GE's entry into the electronic hobbyist market successfully started with the CK722 transistor.
The output is usually connected to an external pull-up resistor, which pulls the output voltage to the resistor's supply voltage when the transistor is off. For PNP open collector outputs, the emitter of the PNP transistor is internally connected to the positive voltage rail, so the collector outputs a high voltage when the transistor is on or ...
The TO-66 package is made entirely of metal and is commonly used by silicon controlled rectifiers and power transistors. [2] In Europe, it was popularly used by the complementary germanium power transistors AD161/AD162. [3] The TO-66 package consists of a diamond-shaped base plate with diagonals of 31.4 mm (1.24 in) and 19.0 mm (0.75 in).