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In a single read or write operation, only one bank is accessed, therefore the number of bits in a column or a row, per bank and per chip, equals the memory bus width in bits (single channel). The size of a bank is further determined by the number of bits in a column and a row, per chip, multiplied by the number of chips in a bank.
For example, a system with 2 13 = 8,192 rows would require a staggered refresh rate of one row every 7.8 μs which is 64 ms divided by 8,192 rows. A few real-time systems refresh a portion of memory at a time determined by an external timer function that governs the operation of the rest of a system, such as the vertical blanking interval that ...
The SDRAM also maintains an internal counter, which iterates over all possible rows. The memory controller must simply issue a sufficient number of auto refresh commands (one per row, 8192 in the example we have been using) every refresh interval (t REF = 64 ms is a common value). All banks must be idle (closed, precharged) when this command is ...
(memory density) This is the total memory capacity of the chip. Example: 128 Mib. (memory depth) × (memory width) Memory depth is the memory density divided by memory width. Example: for a memory chip with 128 Mib capacity and 8-bit wide data bus, it can be specified as: 16 Meg × 8. Sometimes the "Mi" is dropped, as in 16×8.
A row data buffer may be from 32 to 4096 bytes long, depending on the type of memory. Rows larger than 32 bytes ignore some of the low-order address bits in the Activate command. Rows smaller than 4096 bytes ignore some of the high-order address bits in the Read command. Non-volatile memory does not support the Write command to row data buffers.
Also some memory controllers have a maximum supported number of ranks. DRAM load on the command/address (CA) bus can be reduced by using registered memory. [citation needed] Predating the term rank (sometimes also called row) is the use of single-sided and double-sided modules, especially with SIMMs. While most often the number of sides used to ...
There is a common belief that number of module ranks equals number of sides. As above data shows, this is not true. One can also find 2-side/1-rank modules. One can even think of a 1-side/2-rank memory module having 16(18) chips on single side ×8 each, but it is unlikely such a module was ever produced.
More generally, there are d! possible orders for a given array, one for each permutation of dimensions (with row-major and column-order just 2 special cases), although the lists of stride values are not necessarily permutations of each other, e.g., in the 2-by-3 example above, the strides are (3,1) for row-major and (1,2) for column-major.