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  2. File:Bjt forward active bands.svg - Wikipedia

    en.wikipedia.org/wiki/File:Bjt_forward_active...

    is the w:conduction band, indicates the quasi-w:fermi energy levels, is the intrinsic Fermi level of the undoped semiconductor, and is the w:valence band. This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction.

  3. File:Ebers-Moll model schematic (PNP).svg - Wikipedia

    en.wikipedia.org/wiki/File:Ebers-Moll_model...

    A schematic diagram of the Ebers-Moll models of a PNP BJT. The base, collector and emitter currents are I B, I C and I E, the common-base forward and reverse current gains are α F and α R, and the collector and emitter diode currents are I CD and I ED. Date: 4 August 2010, 05:26 (UTC) Source: Ebers-Moll_Model_PNP.PNG; Author

  4. Band diagram - Wikipedia

    en.wikipedia.org/wiki/Band_diagram

    Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]

  5. File:Bjt equilibrium bands v2.svg - Wikipedia

    en.wikipedia.org/wiki/File:Bjt_equilibrium_bands...

    Energy band diagram of a simple bipolar junction transistor under equilibrium showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. <math>E_c</math> is the conduction band

  6. File:PNP BJT - Structure & circuit.svg - Wikipedia

    en.wikipedia.org/wiki/File:PNP_BJT_-_Structure_...

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  7. p–n junction - Wikipedia

    en.wikipedia.org/wiki/P–n_junction

    The connections are illustrated in the adjacent diagram. Because the p-type material is now connected to the negative terminal of the power supply, the ' holes ' in the p-type material are pulled away from the junction, leaving behind charged ions and causing the width of the depletion region to increase.

  8. Transistor diode model - Wikipedia

    en.wikipedia.org/wiki/Transistor_diode_model

    In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.

  9. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948, [12] was for three decades the device of choice in the design of discrete and integrated circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the design of digital integrated circuits.