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A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. [1] It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit.
An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may vary from country to country, or engineering ...
BJTs PNP and NPN schematic symbols. 3D model of a TO-92 package, commonly used for small bipolar transistors. A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier.
The programmable unijunction transistor, or PUT, is a multi-junction device that, with two external resistors, displays similar characteristics to the UJT. It is a close cousin to the thyristor and like the thyristor consists of four p-n layers. It has an anode and a cathode connected to the first and the last layer respectively, and a gate ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. [1] JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage -controlled in that they do not ...
Working principle. Semiconductor. Invented. 1959. Electronic symbol. IGBT schematic symbol. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) [ 1 ][ 2 ...
Cross section of 2N2222 in metal TO-18 package, showing connection wires between external pins and die. The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.