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The concept of a field-effect transistor (FET) was first proposed by Julius Edgar Lilienfeld, who received a patent for his idea in 1930. [6] He proposed that a field-effect transistor behaves as a capacitor with a conducting channel between a source and a drain electrode. Applied voltage on the gate electrode controls the amount of charge ...
Julius Edgar Lilienfeld, who proposed the concept of a field-effect transistor in 1925.. The concept of a field-effect transistor (FET) was first patented by the Austro-Hungarian born physicist Julius Edgar Lilienfeld in 1925 [1] and by Oskar Heil in 1934, but they were unable to build a working practical semiconducting device based on the concept.
The mode can be determined by the sign of the threshold voltage (gate voltage relative to source voltage at the point where an inversion layer just forms in the channel): for an N-type FET, enhancement-mode devices have positive thresholds, and depletion-mode devices have negative thresholds; for a P-type FET, enhancement-mode have negative ...
Cross section of a GaAs/AlGaAs/InGaAs pHEMT Band diagram of GaAs/AlGaAs heterojunction-based HEMT, at equilibrium.. A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of ...
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations in solution. [1] When the target analyte concentration changes, the current through the transistor will change accordingly. [2]
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
CorPower Ocean AB is a wave energy device developer, headquartered in Stockholm, Sweden. They also have offices in Oslo , Viana do Castelo , and Stromness . The office in Viana do Castelo is an R&D centre that also serves as the manufacturing and service centre for the wave energy converters (WEC).
Fairchild FQD19N10 - N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ. A quantum field-effect transistor (QFET) or quantum-well field-effect transistor (QWFET) is a type of MOSFET (metal–oxide–semiconductor field-effect transistor) [1] [2] [3] that takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistor's area of ...