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  2. LPDDR - Wikipedia

    en.wikipedia.org/wiki/LPDDR

    Both LPDDR4 and LPDDR5 allow up to 10 bits of column address, but the names are different. LPDDR4's C0–C9 are renamed B0–B3 and C0–C5. As with LPDDR4, writes must start at a multiple-of-16 address with B0–B3 zero, but reads may request a burst be transferred in a different order by specifying a non-zero value for B3.

  3. DDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR4_SDRAM

    DDR4 speeds are advertised as double the base clock rate due to its Double Data Rate (DDR) nature, with common speeds including DDR4-2400 and DDR4-3200, and higher speeds like DDR4-4266 and DDR4-5000 available at a premium. Unlike DDR3, DDR4 does not have a low voltage variant; it consistently operates at 1.2 V. Additionally, DDR4 improves on ...

  4. DDR SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR_SDRAM

    In the late 1980s IBM invented DDR SDRAM, they built a dual-edge clocking RAM and presented their results at the International Solid-State Circuits Convention in 1990. [ 6 ] [ 7 ] Samsung released the first commercial DDR SDRAM chip (64 Mbit ) in June 1998, [ 3 ] followed soon after by Hyundai Electronics (now SK Hynix ) the same year. [ 8 ]

  5. Synchronous dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Synchronous_dynamic_random...

    Synchronous graphics RAM (SGRAM) is a specialized form of SDRAM for graphics adaptors. It is designed for graphics-related tasks such as texture memory and framebuffers , found on video cards . It adds functions such as bit masking (writing to a specified bit plane without affecting the others) and block write (filling a block of memory with a ...

  6. Memory rank - Wikipedia

    en.wikipedia.org/wiki/Memory_rank

    A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously.In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate (the data pins are shared across ranks).

  7. ChangXin Memory Technologies - Wikipedia

    en.wikipedia.org/wiki/ChangXin_Memory_Technologies

    As of 2020, ChangXin manufactured LPDDR4 and DDR4 memory on a 19 nm process, with a capacity of 40,000 wafers per month. [1] The company planned to increase output to 120,000 wafers per month and launch 17 nm LPDDR5 by the end of 2022, with a target total capacity of 300,000 wafers per month in the long-term. [2]

  8. Apple silicon - Wikipedia

    en.wikipedia.org/wiki/Apple_silicon

    The RAM in A5X is separate from the main CPU package. ... LPDDR4-3200 (1600 MHz) September 25, 2015 APL1022 ... LPDDR4X-4266 (2133 MHz) 34.1 GB/s 2 GB

  9. DDR2 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR2_SDRAM

    4266 3-3-3 11.25 C 4-4-4 12 DDR2-667 C PC2-5300* 166 6 333 667 5333 4-4-4 12 D 5-5-5 ... RAM may be identified by an additional U in the designation. PC2-4200R is a ...

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