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For example, DDR3-2000 memory has a 1000 MHz clock frequency, which yields a 1 ns clock cycle. With this 1 ns clock, a CAS latency of 7 gives an absolute CAS latency of 7 ns. Faster DDR3-2666 memory (with a 1333 MHz clock, or 0.75 ns per cycle) may have a larger CAS latency of 9, but at a clock frequency of 1333 MHz the amount of time to wait 9 ...
t. e. Low-Power Double Data Rate (LPDDR), also known as LPDDR SDRAM, is a type of synchronous dynamic random-access memory that consumes less power than other random access memory designs and is thus targeted for mobile computing devices such as laptop computers and smartphones. Older variants are also known as Mobile DDR, and abbreviated as mDDR.
The memory cell is the fundamental building block of memory. It can be implemented using different technologies, such as bipolar, MOS, and other semiconductor devices. It can also be built from magnetic material such as ferrite cores or magnetic bubbles. [1] Regardless of the implementation technology used, the purpose of the binary memory cell ...
A memory divider is a ratio which is used to determine the operating clock frequency of computer memory in accordance with front side bus (FSB) frequency, if the memory system is dependent on FSB clock speed. Along with memory latency timings, memory dividers are extensively used in overclocking memory subsystems to find stable, working memory ...
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.
Memory bandwidth is the rate at which data can be read from or stored into a semiconductor memory by a processor. Memory bandwidth is usually expressed in units of bytes/second, though this can vary for systems with natural data sizes that are not a multiple of the commonly used 8-bit bytes. Memory bandwidth that is advertised for a given ...
Magnetic-core memory was invented in 1947 and developed up until the mid-1970s. It became a widespread form of random-access memory, relying on an array of magnetized rings. By changing the sense of each ring's magnetization, data could be stored with one bit stored per ring.
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