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"As a result, it is increasingly difficult to implement traditional pin-diode switch solutions. The PE42850/51 RF switches offer superior performance, with low power consumption, high linearity ...
The prior art includes an RF MEMS frequency tunable fractal antenna for the 0.1–6 GHz frequency range, [18] and the actual integration of RF MEMS switches on a self-similar Sierpinski gasket antenna to increase its number of resonant frequencies, extending its range to 8 GHz, 14 GHz and 25 GHz, [19] [20] an RF MEMS radiation pattern ...
These modules switch the power using an impulse relay. In the U.S., these modules are generally rated to control loads up to 15 amperes (1800 watts at 120 V). Many device modules offer a feature called local control. If the module is switched off, operating the power switch on the lamp or appliance will cause the module to turn on.
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
Comtech Telecommunications Corp. Receives $1.2 Million Contract Award for High-Power Solid-State RF Switches to Support the U.S. Military MELVILLE, N.Y.--(BUSINESS WIRE)-- August 6, 2013--Comtech ...
Asad Ali Abidi developed RF CMOS technology at UCLA during the late 1980s to early 1990s.. Pakistani engineer Asad Ali Abidi, while working at Bell Labs and then UCLA during the 1980s–1990s, pioneered radio research in metal–oxide–semiconductor (MOS) technology and made seminal contributions to radio architecture based on complementary MOS (CMOS) switched-capacitor (SC) technology. [13]
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