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For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current conditions over which the device can be expected to operate without self-damage. [1] Illustration of safe operating area of a bipolar power transistor.
12 nm: Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima Nippon Telegraph and Telephone (NTT) [37] [42] September 1987: 500 nm: 12.5 nm: Hussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. Haddad IBM T.J. Watson Research Center [43] December 1987: 250 nm? Naoki Kasai, Nobuhiro Endo, Hiroshi Kitajima NEC [44] February 1988: 400 nm 10 nm
A thermal copper pillar bump, also known as a "thermal bump", is a thermoelectric device made from thin-film thermoelectric material embedded in flip chip interconnects (in particular copper pillar solder bumps) for use in electronics and optoelectronic packaging, including: flip chip packaging of CPU and GPU integrated circuits (chips), laser diodes, and semiconductor optical amplifiers (SOA).
High-temperature operating life (HTOL) is a reliability test applied to integrated circuits (ICs) to determine their intrinsic reliability. This test stresses the IC at an elevated temperature, high voltage and dynamic operation for a predefined period of time.
Superconductive behavior under varying magnetic field and temperature. The graph shows magnetic flux B as a function of absolute temperature T. Critical magnetic flux densities B C1 and B C2 and the critical temperature T C are labeled. In the lower region of this graph, both type-I and type-II superconductors display the Meissner effect (a). A ...
In semiconductor physics, the Haynes–Shockley experiment was an experiment that demonstrated that diffusion of minority carriers in a semiconductor could result in a current. The experiment was reported in a short paper by Haynes and Shockley in 1948, [1] with a more detailed version published by Shockley, Pearson, and Haynes in 1949.
In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.
The planar process is a manufacturing process used in the semiconductor industry to build individual components of a transistor, and in turn, connect those transistors together. It is the primary process by which silicon integrated circuit chips are built, and it is the most commonly used method of producing junctions during the manufacture of ...