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A traditional, front-illuminated digital camera is constructed in a fashion similar to the human eye, with a lens at the front and photodetectors at the back. This traditional orientation of the sensor places the active matrix of the digital camera image sensor—a matrix of individual picture elements—on its front surface and simplifies manufacturing.
Exmor R is a back-illuminated version of Sony's CMOS image sensor. [5] Exmor R was announced by Sony on 11 June 2008 and was the world's first mass-produced implementation of the back-illuminated sensor technology. [6] [non-primary source needed] Sony claims that Exmor R is approximately twice as sensitive as a normal front illuminated sensor.
Avalanche photodiodes are photodiodes with structure optimized for operating with high reverse bias, approaching the reverse breakdown voltage. This allows each photo-generated carrier to be multiplied by avalanche breakdown , resulting in internal gain within the photodiode, which increases the effective responsivity of the device.
Hagiwara was elected Fellow of the IEEE in 2001, "For pioneering work on, and development of, solid-state imagers", for, among other things, his 1975 invention of a photodiode that was later branded by Sony the "hole accumulation device" (HAD), and which Sony and he claim as the origin of the pinned photodiode. [2] [3]
Photodiodes can be further categorized into: a. PIN Photodiodes: These photodiodes have an additional intrinsic (I) region between the P and N regions, which extends the depletion region and improves the device's performance. b. Schottky Photodiodes: In Schottky photodiodes, a metal-semiconductor junction is used instead of a PN junction.
A micrograph of the corner of the photosensor array of a webcam digital camera Image sensor (upper left) on the motherboard of a Nikon Coolpix L2 6 MP. The two main types of digital image sensors are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor), fabricated in complementary MOS (CMOS) or N-type MOS (NMOS or Live MOS) technologies.
A passive-pixel sensor consists of passive pixels which are read out without amplification, with each pixel consisting of a photodiode and a MOSFET switch. [12] In a photodiode array, pixels contain a p-n junction, integrated capacitor, and MOSFETs as selection transistors. A photodiode array was proposed by G. Weckler in 1968, predating the ...
Commercial single-photon avalanche diode module for optical photons. A single-photon avalanche diode (SPAD), also called Geiger-mode avalanche photodiode [1] (G-APD or GM-APD [2]) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours.